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data sheet T1400TA18A issue 1 page 1 of 14 may, 2001 westcode date:- 10 may, 2001 data sheet issue:- 1 insulated gate bi-polar transistor type T1400TA18A (capsule type) absolute maximum ratings voltage ratings maximum limits units v ces collector ? emitter voltage (note 1) 1800 v v ges peak gate ? emitter voltage (note 1) 20 v ratings maximum limits units i c dc ? collector current, igbt (note 2) 1400 a i crm repetitive peak collector current, t p =1ms, igbt (note 2) 2800 a i f dc ? forward current, diode 1400 a i frm repetitive peak forward current, t p =1ms, diode 2800 a p max maximum power dissipation, igbt 6.6 kw t j operating temperature range (note 3) -60 to +150 c t stg storage temperature range (note 3) -60 to +150 c notes: - 1) unless otherwise indicated t j = 125oc 2) t c = 90c 3) for operation below ?40c or above 125c please contact factory introduction this rating report represents the outline specification for an insulated gate bi-polar transistor (igbt) housed in a 75mm boss diameter hermetic cold weld capsule.
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 2 of 14 may, 2001 characteristics parameter min typ max test conditions units igbt characteristics - 4.1 4.3 i c = 1400a, v ge = 15v, t j = 25c v v ce(sat) collector ? emitter saturation voltage - 5.3 5.5 i c = 1400a, v ge = 15v v v o r s threshold voltage slope resistance - - - - 2 2.5 current range 400a ? 1400 a v m ? v ge(th) gate threshold voltage 4 5.5 7 v ce = v ge , i c = 20ma v i ces collector ? emitter cut-off current - - 100 v ce = v ces , v ge = 0v ma i ges gate leakage current - 0.05 1 v ge = 20v ma c ies input capacitance - 150 - v ce = 25v, v ge = 0v, f = 1mhz nf t d(on) turn-on delay time - 0.85 1.25 s t r (i) rise time - 0.3 - s t on turn-on time - 1.85 2.75 s q g(on) turn-on gate charge - 13 - c e on turn-on energy - 280 - mj t d(off) turn-off delay time - 1.6 2.0 s t f fall time - 0.75 1.0 s q g(off) turn-off gate charge - 17.0 - c e off turn-off energy - 525 - i c =1400a, v ce = 0.5v ces , v ge = 15v, r g(on) =1 ? r g(off) =5 ?, mj diode characteristics. -22.4i f = 1400a, t j =25c v v f forward voltage -2.12.5i f = 1400a v v o threshold voltage - - 1.28 v r s slope resistance - - 0.87 current range 400a ? 1400 a m ? i rm peak reverse recovery current - 300 380 a q ra recovered charge (50% chord) - 260 360 c t rr reverse recovery time (50% chord) - 1.4 1.8 i f = 1400a, v ge =0v, di/dt = 600a/s s thermal & mechanical - - 15 double side cooled k/kw - - 25 collector side cooled k/kw r th(j-hs) thermal impedance junction to sink, igbt - - 39 emitter side cooled k/kw - - 35 double side cooled k/kw - - 52 cathode side cooled k/kw r th(j-hs) thermal impedance junction to sink, diode - - 104 anode side cooled k/kw f mounting force 20 - 30 (see note 2) kn w t weight - 1.2 - kg notes:- 1) unless otherwise indicated t j =125 c. 2) for other clamping forces, consult factory.
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 3 of 14 may, 2001 notes on ratings and characteristics maximum ratings 1.0 collector-emitter voltage this is measured with a mechanical short circuit connected between gate and emitter. the gate to cathode should not be open-circuit when device is required to support voltage collector to emitter, as the device may be damaged. 2.0 peak gate-emitter voltage this is measured with a mechanical short circuit connected between collector and emitter. 3.0 collector current (igbt) and forward current (diode) dc condition represents the nominal operating current for the device. s th c j s s t av c r r t t r v r v i c . ) ( . 4 . 2 2 2 0 0 ) ( ) ( ? + + = 4.0 maximum power the maximum power dissipation for the igbt under continuous operating conditions, double side cooled. characteristics 5.0 collector-emitter saturation voltage the figures given in the characteristics, at the nominal operating current, are supplemented by figures 1 & 2, which give the typical and maximum saturation voltage against collector current. curves were measured with a forward gate voltage of +15v. 6.0 abcd constants the on-state characteristic i c vs v ce(sat) , is represented in two ways; (i) the well established v 0 and r s tangent used for rating purposes and (ii) a set of constants a, b, c, d, forming the coefficients of the representative equation for v ce(sat) in terms of i c given as: () c c c sat ce i d i c i b a v ? + ? + ? + = ln ) ( the constants, derived by curve fitting software, are given in this report for both typical & maximum hot characteristics where possible. the resulting values for v ce(sat) agree with the true device characteristic over a limited current range which is generally that over which the curve is plotted. typical coefficients maximum coefficients a -0.72348816 -0.52348816 b 0.379996 0.379996 c 1.336454 10 -3 1.336454 10 -3 d 0.03740789 0.03740789 7.0 transfer characteristic. the typical transfer characteristics, at 25 & 125c, are included in figures 3 & 4 against collector currents of 700a, 1000a and 1400a. 8.0 leakage currents these are measured at grade voltage and maximum junction temperature. for i ces , v ge = short circuit. note: typical values would be much lower. 9.0 dynamic gate characteristics typical values of gate charge and peak current against series gate resistance, at turn-on and turn-off, are included in figures 5 to 8, device is measured under normal conditions with v ce >20v. curves are included for gate voltage in the range 5 to 20v.
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 4 of 14 may, 2001 10.0 switching characteristics (igbt) typical and maximum switching times are included in the characteristics table, at the nominal operating current, under inductive load conditions. figures 9 to 12 give typical switching times against series gate resistance for collector currents of 700 & 1400a, with a gate voltage of 15v. 11.0 switching losses (igbt) typical turn-on and turn-off energy against collector current are included in figures 13 to 16. all switching characteristics are measured using the inductive switching circuit outlined in the diagram shown below and a 0.48f 5.0 ? rc snubber is connected across the test device. gate drive dut l 12.0 reverse bias safe operating area the curve in figure 17 shows the typical rbsoa. this is defined as the maximum simultaneous collector current and collector emitter voltage that the device can safely switch without breakdown. the maximum collector current is 200% rated at full rated v ces . 13.0 forward bias safe operating area into short circuit to prevent damage occurring by short circuits in igbt circuitry, it is usual to detect this condition and generate an inhibit signal within the gate driver to turn-off the igbt. the reaction time for the gate detection and storage time of the igbt must be taken into account. during this period the igbt must withstand the full short circuit. the igbt is rated to withstand a short circuit of 10s. the actual value of the short circuit current is determined by the igbt characteristics 14.0 maximum frequency of igbt the maximum operating frequency has been calculated as a function of maximum power dissipation, line voltage, total switching losses, conduction losses, v ce(sat) , duty factor and rms current. 15.0 diode forward characteristics the forward voltage in the characteristic table, at the nominal operating current, is supplemented by figures 20 and 21, which give the typical and maximum forward voltage against forward current. 15.1 abcd coefficients the forward characteristic i f vs. v f is represented in two ways: (i) the well established v o and r s tangent used for rating purposes and; (ii) a set of constants a, b, c, d, forming the coefficients of the representative equation for v f in terms of i f given as: () f f f f i d i c i b a v ? + ? + ? + = ln the constants, derived by curve fitting software, are given in this report for both typical & maximum hot characteristics where possible. the resulting values for v f agree with the true device characteristic over a limited current range which is generally that over which the curve is plotted. typical coefficients maximum coefficients a 0.25867154 0.65867154 b 0.02979237 0.02979237 c 2.453228 10 -4 2.453228 10 -4 d 0.03426433 0.03426433
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 5 of 14 may, 2001 16.0 diode recovery characteristics the figures given in the characteristic table are supplemented by curves 22 to 25. curves are included for maximum and typical recovered charge plus typical peak recovery current and recovery time against commutation rate. all curves are given at the nominal operating current of 1400a. 17.0 thermal and mechanical characteristics double and single side transient thermal impedance characteristics are included in figures 26 & 27 for the igbt & diode respectively. 18.0 handling precautions precautions against electrostatic failure. igbt semiconductors are electrostatic-sensitive devices and require special handling techniques in accordance with british standard bs en 100015-1 1992.
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 6 of 14 may, 2001 curves figure 1 ? typical collector-emitter saturation voltage characteristics figure 2 ? maximum collector-emitter saturation voltage characteristics 10 100 1000 10000 02468 collector to emitter saturation voltage - v ce(sat) (v) collector current - i c (a) t j =25c t j =125c v ge =+15v T1400TA18A issue 1 10 100 1000 10000 02468 collector to emitter saturation voltage - v ce(sat) (v) collector current - i c (a) t j =25c t j =125c T1400TA18A issue 1 v ge =+15v figure 3 ? typical transfer characteristic at 25c figure 4 ? typical transfer characteristic at 125c 2 2.5 3 3.5 4 4.5 5 5.5 6 10 12 14 16 18 20 gate emitter voltage - v ge (v) collector to emitter saturation voltage - v ce(sat) (v) 1400a T1400TA18A issue 1 700a 1000a 2 3 4 5 6 7 8 10 12 14 16 18 20 gate emitter voltage - v ge (v) collector to emitter saturation voltage - v ce(sat) (v) 700a T1400TA18A issue 1 1400a 1000a
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 7 of 14 may, 2001 figure 5 ? typical peak turn-on gate current figure 6 ? typical turn-on gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 gate resistance - r g(on) ( ? ? ? ? ) peak gate current - i gp(on) (a) v ge =15v T1400TA18A issue 1 i c =1400a 4 5 6 7 8 9 10 11 12 13 14 0 5 10 15 20 gate resistance - r g(on) ( ? ? ? ? ) gate charge - q g(on) (c) T1400TA18A issue 1 i c =1400a i c =700a figure 7 ? typical peak turn-off gate current figure 8 ? typical turn-off gate charge 0 2 4 6 8 10 0 5 10 15 20 25 gate resistance - r g(off) ( ? ? ? ? ) peak gate current - i gp(off) (a) v ge =-15v T1400TA18A issue 1 i c =1400a 8 10 12 14 16 18 20 0 5 10 15 20 gate resistance - r g(off) ( ? ? ? ? ) gate charge - q g(off) (c) i c =700a i c =1400a T1400TA18A issue 1
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 8 of 14 may, 2001 figure 9 ? typical turn-on delay time vs gate resistance figure 10 ? typical rise time vs gate resistance 0 1 2 3 4 5 6 7 0 5 10 15 20 25 gate resistance - r g(on) ( ? ? ? ? ) turn-on delay time - t d(on) (s) i c =700a i c =1400a T1400TA18A issue 1 v ce =900v v ge =15v t j =125c 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 gate resistance - r g(on) ( ? ? ? ? ) turn-on rise time - t r (s) i c =1400a i c =700a T1400TA18A issue 1 v ce =900v v ge =15v t j =125c figure 11 ? typical turn-off delay time vs gate resistance figure 12 ? typical fall time vs gate resistance 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 gate resistance - r g(off) ( ? ? ? ? ) turn-off delay time - t d(off) (s) i c =700a T1400TA18A issue 1 v ce =900v v ge =-15v t j =125c i c =1400a 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 gate resistance - r g(off) ( ? ? ? ? ) turn-off fall time - t f (s) i c =1400a T1400TA18A issue 1 v ce =900v v ge =-15v t j =125c i c =700a
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 9 of 14 may, 2001 figure 13 ? typical turn-on energy vs. collector current figure 14 ? typical turn-on energy vs. gate resistance 0 50 100 150 200 250 300 0 500 1000 1500 2000 collector current - i c (a) turn-on energy per pulse - e on (mj) v ce =400v r g =1 ? v ge =15v t j =125c v ce =900v v ce =700v T1400TA18A issue 1 0 1000 2000 3000 4000 0 5 10 15 20 25 gate resistance - r g(on) ( ? ? ? ? ) turn-on energy per pulse - e on (mj) i c =1400a T1400TA18A issue 1 v ce =900v v ge =15v t j =125c i c =700a figure 15 ? typical turn-off energy vs. collector current figure 16 ? typical turn-off energy vs. gate resistance 0 100 200 300 400 500 600 0 500 1000 1500 2000 collector current - i c (a) turn-off energy per pulse - e off (mj) v ce =400v v ce =700v v ce =900v r g =5 ? v ge =-15v t j =125c T1400TA18A issue 1 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 gate resistance - r g(off) ( ? ? ? ? ) turn-off energy per pulse - e off (mj) i c =1400a T1400TA18A issue 1 v ce =900v v ge =-15v t j =125c i c =700a
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 10 of 14 may, 2001 figure 17 ? rbsoa figure 18 ? fbsoa into short circuit 0 500 1000 1500 2000 2500 3000 0 400 800 1200 1600 2000 collector-emitter voltage - v ce (v) collector current - i c (a) T1400TA18A issue 1 0 1000 2000 3000 4000 5000 0 200 400 600 800 1000 collector-emitter voltage v ce (v) peak collector current - i csc (a) T1400TA18A issue 1 t j = 125c v ge = 15v t sc 10s r g (on) = 6 ? max. di/dt 1500a/s time between short circuits:>1s figure 19 ? maximum operating frequency 200 400 600 800 1000 1200 1400 1600 110100 frequency - khz rms current - a 400v T1400TA18A issue 1 dut y factor 0.5 t j = 125c 700v 900v
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 11 of 14 may, 2001 figure 20 ? typical diode forward characteristic figure 21 ? maximum diode forward characteristic 10 100 1000 10000 01234 instantaneous forward voltage - v f (v) instantaneous forward current - i f (a) t j =25c t j =125c T1400TA18A issue 1 10 100 1000 10000 01234 instantaneous forward voltage - v f (v) instantaneous forward current - i f (a) t j =25c t j =125c T1400TA18A issue 1 figure 22 ? typical recovered charge (50% chord) figure 23 ? maximum recovered charge (50% chord) 10 100 1000 100 1000 10000 commutation rate - di/dt (a/s) recovered charge - q ra (c) t j =25c t j =125c T1400TA18A issue 1 i f =1400a 100 1000 100 1000 10000 commutation rate - di/dt (a/s) recovered charge - q ra (c) t j =25c t j =125c T1400TA18A issue 1 i f =1400a
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 12 of 14 may, 2001 figure 24 ? typical reverse recovery current figure 25 ? typical reverse recovery time 100 150 200 250 300 350 400 450 500 100 1000 10000 commutation rate - di/dt (a/s) peak reverse recovery current - i rm (a) T1400TA18A issue 1 t j =25c t j =125c 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 100 1000 10000 commutation rate - di/dt (a/s) recovery time - t rr (ns) t j =25c t j =125c T1400TA18A issue 1 i f =1400a figure 26 ? transient thermal impedance (igbt) 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 time (s) transient thermal impedance junction to sink - r th(j-hs) (k/w) double side collecto r emitte r T1400TA18A issue 1
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 13 of 14 may, 2001 figure 27 ? transient thermal impedance (diode) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 time (s) transient thermal impedance junction to sink - r th(j-hs) (k/w) double side cathode anode T1400TA18A issue 1
westcode positive development in power electronics T1400TA18A data sheet T1400TA18A issue 1 page 14 of 14 may, 2001 outline drawing & ordering information ordering information (please quote 10 digit code as below) t1400 ta 18 a fixed type code fixed outline code voltage grade 1800v standard product typical order code: T1400TA18A (v ces = 1800v) westcode uk: westcode semiconductors ltd. p.o. box 57, chippenham, wiltshire, england. sn15 1jl. tel: +44 (0) 1249 444524 fax: +44 (0) 1249 659448 e-mail: wsl.sales@westcode.com internet: http://www.westc ode.com usa: westcode semiconductors inc. 3270 cherry avenue, long beach, california 90807 tel: 562 595 6971 fax: 562 595 8182 e-mail: wsi.sales@westcode.com the information contained herein is confidential and is protected by copyright. the information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors westcode semiconductors ltd. in the interest of product improvement, westcode reserves the right to change specifications at any time without prior notice. devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subjec t to the conditions and limits contained in this report. ? westcode semiconductors ltd.

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